Dr. Samik Mukherjee - Jio Institute Skip to main content

Dr. Samik Mukherjee

Assistant Professor, Jio Institute

Dr. Samik Mukherjee is an Assistant Professor, at the Jio Institute, Navi Mumbai, India, specializing in the field of semiconductor science and technologies. He has a diverse academic background, holding graduate and postgraduate degrees in Physics, Radiophysics and Electronics, and Applied Sciences from reputed universities in India and France. In 2017, he completed his Ph.D. from the Nano and Quantum Semiconductor Laboratory, at Ecole Polytechnique, Montreal (Canada), where he demonstrated the impact of stable semiconductor isotopes on fundamental properties of nanoscale semiconductors. Thereafter, he served as a postdoctoral researcher in Canada, the USA, and Germany, working on advanced fundamental topics as well as industry-oriented projects.

Over the years, his accomplishments have yielded a deeper understanding of the growth and fundamental properties of technologically relevant nanostructured semiconductors and paved the path to the development of exciting and new applications. His research is highlighted in peer-reviewed publications, across several high-impact journals and internationally acclaimed conferences. His research expertise is in the epitaxial growth of semiconductors using a variety of deposition techniques; advanced characterization of materials by employing a wide range of microscopy, spectroscopy, and tomography techniques; device nanofabrication and their performance optimization; to name a few.

He is currently invested in harnessing novel phenomena in nano- and quantum-scale semiconductors, to achieve superior functionalities with potential impact on nanoelectronics, optoelectronics, photonics, clean energy harvesting, bio-integrable technologies, quantum technologies, and many more. His research interests include:

  • Silicon-compatible optoelectronics, photonics, and imaging devices
  • Beyond graphene 2D materials and van der Waals heterostructures for nanoelectronics
  • Semiconductor nanowires and quantum dots – synthesis, applications, and transport
  • Spin engineering in silicon-germanium structures and devices for quantum information
  • Novel photovoltaic and thermoelectric architectures for carbon-free energy harvesting
  • 2013 to 2017: Doctor of Philosophy (Ph.D.) in Engineering Physics, from Ecole Polytechnique Montreal, University of Montreal, Canada
  • 2011 to 2012: Master of Science and Technology in Physics and Applications (M2) with specialization in Nanoscience from Ecole Polytechnique, Paris, France
  • 2010 to 2012: Master of Technology (M.Tech) in Radiophysics and Electronics from the University of Calcutta, India
  • 2007 to 2010: Post-B.Sc., 3-Years Bachelor of Technology (Post-B.Sc.,3-Years, B.Tech) in Radiophysics and Electronics from the University of Calcutta, India
  • 2004 to 2007: Bachelor of Science (B.Sc.) in Physics from Saint Xavier’s College, University of Calcutta, India
  • Best student paper award at the 2015 International Conference on Silicon Epitaxy and Heterostructure
  • Awarded the 2017 best Ph.D. thesis in the Department of engineering physics
  • Awarded the 2017 best Ph.D. thesis in Ecole Polytechnique, Montreal
  • Postdoctoral Research Fellow (July 2021 – December 2022) at the Leibniz Institute for Solid State and Materials Research (Dresden, Germany) Research Project: Transport in two-dimensional layered materials grown by atomic layer deposition for thermoelectric and quantum applications
  • Postdoctoral Research Fellow (Sept. 2017 – June 2021) at Ecole Polytechnique (University of Montreal) Canada and Applied Materials (Santa Clara, USA) Research Project: Silicon/Germanium-based superlattices and suspended nanowires for nanoelectronics (7-nm technology node and beyond) and integrated photonics
  • Visiting Scientist (Jan. 2017 – June 2021) Department of Material Science and Engineering and the Northwestern University Centre for Atom Probe Tomography (NUCAPT), Northwestern University, Chicago (USA)
  1. J. Yang, Jianzhu Li, A. Bahrami, N. Nasiri, S. Lehmann, M. Ola Cichocka, S. Mukherjee, and K. Nielsch; Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature ALD for Self-Powered Photodetector; ACS Applied Materials & Interfaces, vol 14, issue 48, pp 54034, Dec. 2022 (https://doi.org/10.1021/acsami.2c16150) Impact Factor: 10.38
  2. S. Assali, A.Attiaoui, P. del Vecchio, S.Mukherjee, J. Nicolas, and O. Moutanabbir; A light-hole Germanium quantum well on silicon; Advanced Materials, vol 34, issue 27, pp 2201192, May 2022 (https://doi.org/10.1002/adma.202201192) Impact Factor: 30.85
  3. S. Mukherjee, S. Assali, A. Kumar, and O. Moutanabbir; Atomic pathways of solute segregation in the vicinity of nanoscale defects; Nano Letters, vol. 21, issue 23, pp 9882, Nov. 2021 (https://doi.org/10.1021/acs.nanolett.1c02577) Impact Factor: 11.189
  4. S. Mukherjee, M. Wajas, M. de la Mata, U. Givan, S. Senz, J. Arbiol, S. Francoeur, and O. Moutanabbir; Disentangling phonon channels in nanoscale heat transport; Physical Review B, vol. 104, issue 075429, pp 1-7, August 2021 (https://doi.org/10.1103/PhysRevB.104.075429) Impact Factor: 4.036
  5. S. Mukherjee, A. Attiaoui, M. Bauer, and O. Moutanabbir; 3D Atomic mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10nm Superlattices; ACS Applied Materials and Interfaces, vol 12, issue 1, pp 1728 Dec. 2019 (https://doi.org/10.1021/acsami.9b13802) Impact Factor: 9.229
  6. S. Mukherjee, U. Givan, A. Tarun, S. Senz, M. de la Mata, J. Arbiol, and O. Moutanabbir; Reduction of thermal conductivity in silicon nanowires by combined engineering of crystal phase and isotope disorder; Nano Letters, vol. 18, issue 5, pp 3066, April 2018 (https://doi.org/10.1021/acs.nanolett.8b00612) Impact Factor: 12.279
  7. S. Mukherjee, N. Nateghi, R.M. Jacobberger, E. Bouthillier, M. de la Mata, J. Arbiol, T. Coenen, D. Cardinal, P. Levesque, P. Desjardins, R. Martel, M. S. Arnold, and O. Moutanabbir; Growth and luminescence of polytypic InP on epitaxial graphene; Advanced Functional Materials, vol. 28, issue 8, pp. 1705592, Feb. 2018 (https://doi.org/10.1002/adfm.201705592) Impact Factor: 15.621
  8. S. Mukherjee, N. Kodali, D. Isheim, S. Wirths, J. M. Hartmann, D. Buca, D. N. Seidman, and O. Moutanabbir; Short-range atomic ordering in non-equilibrium silicon-germanium-tin semiconductors; Physical Review B (Rapid Communications) vol. 95, issue 16, pp 161402(R), April 2017 (https://doi.org/10.1103/PhysRevB.95.161402) Impact Factor: 3.813
  9. D. Jung, J. Faucher, S. Mukherjee, A. Akey, D. J. Ironside, M. Cabral, X. Sang, J. Lebeau, S. R. Bank, T. Buonassisi, O. Moutanabbir, and M. L. Lee; Highly tensile-strained Ge/InAlAs nanocomposites, Nature Communication, vol. 8, issue 14204, Jan. 2017 (https://doi.org/10.1038/ncomms14204) Impact Factor: 12.353
  10. S. Mukherjee, U. Givan, S. Senz, A. Bergeron, S. Francoeur, M. de la Mata, J. Arbiol, T. Sekiguchi, K. M. Itoh, D. Isheim, D. N. Seidman, and O. Moutanabbir; Phonon engineering in isotopically disordered silicon nanowires; Nano Letters, vol. 15, issue 6, pp 3885, May 2015 (https://doi.org/10.1021/acs.nanolett.5b00708) Impact Factor: 13.779